Nitride Semiconductor Devices: Principles and Simulation (PDF)
(Sprache: Englisch)
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a...
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This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication.
This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Inhaltsverzeichnis zu „Nitride Semiconductor Devices: Principles and Simulation (PDF)“
Part 1: MATERIALS 1. Introduction 2. Electron Bandstructure Parameters 3. Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes 4. Transport Parameters for Electrons and Holes 5. Optical Constants of Bulk Nitrides 6. Intersubband Absorption in AlGaN/GaN Quantum Wells 7. Interband Transitions in InGaN Quantum Wells 8. Electronic and Optical Properties of GaN-based Quantum Wells with (10-10) Crystal Orientation 9. Carrier Scattering in Quantum-Dot Systems Part 2: DEVICES 10. AlGaN/GaN High Electron Mobility Transistors 11. Intersubband Optical Switches for Optical Communications 12. Intersubband Electroabsorption Modulator 13. Ultraviolet Light-Emitting Diodes 14. Visible Light-Emitting Diodes 15. Simulation of LEDs with Phosphorescent Media for the Generation of White Light 16. Fundamental Characteristics of Edge-Emitting Lasers 17. Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers 18. Optical Properties of Edge-Emitting Lasers: Measurement and Simulation 19. Electronic Properties of InGaN/GaN Vertical-Cavity Lasers 20. Optical Design of Vertical-Cavity Lasers 21. GaN Nanowire Lasers
Autoren-Porträt
Joachim Piprek received his doctorate in physics from Humboldt University Berlin, Germany. He has taught graduate courses at universities in Germany, Sweden, and in the United States. Most recently, he was a professor at the University of California at Santa Barbara, where he collaborated for several years with Shuji Nakamura on nitride device simulation and analysis. Joachim Piprek is currently the director of the NUSOD Institute (www.nusod.org). He has previously published two books and authored more than 100 journal and conference publications in this field.
Bibliographische Angaben
- 2007, 1. Auflage, 497 Seiten, Englisch
- Herausgegeben: Joachim Piprek
- Verlag: Wiley-VCH GmbH
- ISBN-10: 3527610715
- ISBN-13: 9783527610716
- Erscheinungsdatum: 27.06.2007
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