Crystal Growth Technology

PrefacePART I: Basic Concepts in Crystal Growth TechnologyTHERMODYNAMIC MODELING OF CRYSTAL-GROWTH PROCESSESIntroductionGeneral Approach of Thermodynamic ModelingCrystal Growth in the System Si-C-O-Ar (Example 1)Crystal Growth of Carbon-Doped GaAs (Example 2)Summary and ConclusionsMODELING OF VAPOR-PHASE GROWTH OF SiC AND AlN BULK CRYSTALSIntroductionModel DescriptionResults and DiscussionsConclusionsADVANCED TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCEIntroductionAxial Vibrational Control in Crystal GrowthAVC-Assisted Czochralski MethodAVC-Assisted Bridgman MethodAVC-Assisted Floating Zone MethodConclusionsPART II: SemiconductorsNUMERICAL ANALYSIS OF SELECTED PROCESSES IN DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICSIntroductionDirectional Solidification MethodCrystallization ProcessImpurity Incorporation in CrystalsSummaryCHARACTERIZATION AND CONTROL OF DEFECTS IN VCz GaAs CRYSTALS GROWN WITHOUT B2O3 ENCAPSULANTIntroductionRetrospectionCrystal Growth Without B2O3 EncapsulantInclusions, Precipitates and DislocationsResidual Impurities and Special Defect StudiesElectrical and Optical Properties in SI GaAsBoron in SC GaAsOutlook on TMF-VCzConclusionsTHE GROWTH OF SEMICONDUCTOR CRYSTALS (Ge, GaAs) BY THE COMBINED HEATER MAGNET TECHNOLOGYIntroductionSelected FundamentsalsTMF Generation in Heater-Magnet ModulesThe HMM DesignNumerical MeasurementsGrowth Results under TMFConclusions and OutlookMANUFACTURING OF BULK AlN SUBSTRATESIntroductionModelingExperimentResults and DiscussionConclusionsINTERACTIONS OF DISLOCATIONS DURING EPITAXIAL GROWTH OF SiC AND GaNIntroductionClassification, Nomenclature and Characterization of Dislocations in SiC and GaNConversion of Basal Plane Dislocations During SiC EpitaxyReduction of Dislocations During Homoepitaxy of GaNConclusionsLOW-TEMPERATURE GROWTH OF TERNARY III-V SEMICONDUCTOR CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTSIntroductionCrystal Growth from Quaternary MeltsSynthesis and Bulk Crystal

Peter Capper is a Materials Team Leader at SELEX GALILEO Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material mercury cadmium telluride (MCT). He holds the patent for the application of the accelerated crucible rotation technique to Bridgman growth and is recognised as a world authority on MCT. He has authored/co-authored over 100 Journal articles and edited/co-edited/co-written 10 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium (France) and a SPIE Symposium (USA) and has edited/co-edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics and is a Series Editor on the Wiley Series `Materials for Electronic and Optoelectronic Appliations¿. In 2008 he received an award from the Swiss Crystallographic Society for his bulk growth work.Peter Rudolph is currently the coordinator of the technology department of the Leibniz-Institute for Crystal Growth in Berlin. His present research field is the growth of semiconductor crystals (GaAs, Ge, Si) in magnetic fields. He obtained the PhD in Solid State Physics at the Technical University of Lvov in 1972, and in 1985 the Professor position at the Humboldt University in Berlin. From 1993-94 he was Guest Professor at the Tohoku University in Sendai. He is associate editor of J. Crystal Growth, president of the German Society of Crystal Growth and member of the IOCG executive committee. He is the author of one monograph, more than 200 papers and book chapters, 7 books editions and 33 patent descriptions. He acted as co-chair and advisor of several international conferences and schools. He received innovation prizes in 2001 and 2008.

"Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries." (Quote.com, 31 January 2011) "Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals." (Quote.com, 20 January 2011)

"Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries." (Quote.com, 31 January 2011)

"Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals." (Quote.com, 20 January 2011)